Pure and lanthanum modified BFO (LaxBi1-xFeO3, x=0.0, 0.08, 0.15, 0.30) thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates by the soft chemical method. The effect of La substitution on the structural and electrical properties was studied. Scanning electron microscopy, x-ray diffraction, and Raman spectroscopy have been employed to characterize the thin films while the piezoelectric measurements were carried out using a setup based on an atomic force microscope. It was found that La-doped BFO thin films exhibited good ferroelectric properties, such as improved leakage current density and retention-free characteristics. The unipolar strain is strongly reduced by the amount of lanthanum added to the system.
展开▼
机译:通过软化学方法在Pt(111)/ Ti / SiO2 / Si衬底上制备了纯的和镧改性的BFO(LaxBi1-xFeO3,x = 0.0,0.08,0.15,0.30)薄膜。研究了La取代对结构和电性能的影响。扫描电子显微镜,X射线衍射和拉曼光谱已用于表征薄膜,而压电测量是使用基于原子力显微镜的装置进行的。发现掺La的BFO薄膜表现出良好的铁电特性,例如改善的漏电流密度和无保持特性。单极性应变会因添加到系统中的镧的量而大大降低。
展开▼